Published 1986
| Version v1
Book
Lattice matching in HgCdTe-CdZnTe heterojunctions
- 1. Infrared Devices Lab., Fujitsu Labs. Ltd., 10-1 Wakamiya-Morinosato Atsugi 243-01
Description
An etch pit study has been made on misfit dislocations in (111) HgCdTe-CdZnTe heterojunctions grown by liquid phase epitaxy. It was shown that misfit dislocations were localized at the original surface of the substrate, because Zn diffused into the epilayer during epitaxial growth prevents movement of dislocations. For lattice matching between Hg/sub 0.7/Cd/sub 0.3/Te and Cd/sub 1-y/Zn/sub y/Te, the optimum ZnTe mole fraction of Cd/sub 1-y/Zn/sub y/Te was found to be 2.9%
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (USA)
- ISBN
- 0-931837-21-9
- Imprint Title
- Layered structures and epitaxy
- Journal Page Range
- p. 109-114.
Conference
- Title
- Materials Research Society meeting.
- Dates
- 2-7 Dec 1985.
- Place
- Boston, MA (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 18055723
- Subject category
- S36: MATERIALS SCIENCE; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CRYSTAL GROWTH; CRYSTAL LATTICES; DIFFUSION; DISLOCATIONS; EPITAXY; ETCHING; FABRICATION; HETEROJUNCTIONS; LIQUIDS; MERCURY TELLURIDES; SURFACES; ZINC TELLURIDES
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; FLUIDS; LINE DEFECTS; MERCURY COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TELLURIDES; TELLURIUM COMPOUNDS; ZINC COMPOUNDS