Published August 1, 1986
| Version v1
Journal article
A theoretical study of the semiinsulating behaviour of Fe in InP
Description
The transition metal impurities introduce levels deep in the band gap of the host semiconductor. For neutral Fe in InP the impurity level is exactly in the mid gap and this provides a clue to its semiinsulating behaviour. A detailed MS X/sub α/ SCF calculation of the different charge states of Fe in InP is presented. The agreement with the experimental results is satisfactory and shows the promise of the method for the analysis of impurities in semiconductors. The Moessbauer isomer shift for the different charge states of Fe in InP are also calculated. (author)
Additional details
Publishing Information
- Journal Title
- Phys. Status Solidi B
- Journal Volume
- 136
- Journal Issue
- 2
- Series
- Phys. Status Solidi B.
- Journal Page Range
- 715-719
- ISSN
- 0370-1972
- CODEN
- PSSBB
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 18003480
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BAND THEORY; CATIONS; CHARGE STATES; CONFIGURATION INTERACTION; DOPED MATERIALS; ENERGY GAP; ENERGY LEVELS; INDIUM PHOSPHIDES; IRON COMPOUNDS; ISOMER SHIFT; MOESSBAUER EFFECT; POTENTIALS; SEMICONDUCTOR MATERIALS; VALENCE
- Descriptors DEC
- CHARGED PARTICLES; INDIUM COMPOUNDS; IONS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; TRANSITION ELEMENT COMPOUNDS