X-ray and electron microscopy studies of arsenium implanted silicon crystals after a pulsed laser annealing

The structural changes obtained due to laser annealing in the surface layer of As-implanted silicon crystals were investigated by means of a triple crystal spectrometer. The rocking curves of implanted crystals do not show any changes compared with non-implanted crystals. It was caused by the large dose of ions which amorphized the surface layer. Laser annealing process influenced on the broadening of rocking curve. The comparative studies were carried out by using the HTEM technique. They showed that the laser annealing caused formation of quasi-mosaic structure, planar defects and dislocation clusters. These defected structure and local strains influence on the broadening of rocking curves. (author)