Paramagnetic centers produced in the plastic deformation of silicon

Spectra of electron paramagnetic resonance (EPR) of defects, introduced under deformation of intrinsic silicon were analyzed. Samples, deformed by compression in 390 deg C ≤T≤ 750 deg C range under the load of 15 MPa≤τ≤200 MPa, were investigated. Coexistence of several different paramagnetic centers, contributing to two main classes from the viewpoint of EPR, notable for times of spin-lattice relaxation T1, was revealed. Measured density of spins and dislocations are not related simply, because the occurrence of EPR signal is dictated by dislocation motion. The detailed analysis of individual centers shows that on the one hand, plstic deformation leads to formation of point defect clusters, and on the other hand, defect in dislocation nuclei or nearly occur during their motion. It was found that point defect clusters form the major part of defects, occurring under deformation