Published March 1986
| Version v1
Journal article
Surface compositional and chemical-state changes of SiC, Si3N4 and SiO2 by energetic hydrogens
Creators
- 1. Japan Atomic Energy Research Inst., Tokai, Ibaraki. Dept. of Chemistry
Description
In the present work, we have investigated bombardment effects of 6-keV H2+-ions upon the chemical states of the surface layers of SiC, Si3N4, SiO2 and related materials by means of the X-ray photoelectron spectroscopy (XPS) technique. Auger electron spectroscopy (AES) was also employed to evaluate the compositional change in the top surface region of SiC. (orig./RK)
Additional details
Publishing Information
- Journal Title
- J. Nucl. Mater.
- Journal Volume
- 138
- Journal Issue
- 1
- Series
- J. Nucl. Mater.
- Journal Page Range
- 145-148
- ISSN
- 0022-3115
- CODEN
- JNUMA
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 17054347
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CHEMICAL STATE; LAYERS; SILICON CARBIDES; SILICON NITRIDES; SILICON OXIDES; SURFACES
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; NITRIDES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS
Optional Information
- Notes
- Letter-to-the-editors.