Published 1982 | Version v1
Miscellaneous

On the efficiency of radiation defect formation in n- and p-germanium doped with nichel and palladium

  • 1. Belorusskij Gosudarstvennyj Univ., Minsk

Description

The effect of the impurity composition and the charge state of primary radiation-induced defects (RD) on defect formation processes under irradiation with gamma-quanta of 60Co and 10 MeV electrons has been studied for n- and p-type Ge crystals with Sb, Ga, Ni and Pd impurities in different ratios by analysing temperature dependences of the Hall coefficient. The rate of charge carrier removal is found to depend on the impurity species and primary RD charge states that are determined by the Fermi level position (Esub(F)) during irradiation

Additional details

Additional titles

Original title (Russian)
Об эффективности образования радиационных дефектов в н- и п-германии, легированном никелем или палладием

Publishing Information

Imprint Title
Radiation damage physics and radiation technology
Series
Voprosy atomnoj nauki i tekhniki.
Journal Page Range
no. 4(23) p. 32-34.
Report number
INIS-SU--186

Optional Information

Notes
1 ref.; 2 figs. Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.