Published January 21, 2003 | Version v1
Journal article

Quantitative characterization of keyhole absorption mechanisms in 20 kW-class CO2 laser welding processes

  • 1. School of Industrial Engineering, Purdue University, West Lafayette, IN (United States)
  • 2. Department of Manufacturing Science, Osaka University, Osaka (Japan)

Description

Deep penetration laser welding is associated with the deposition of very high irradiation of a laser beam to a workpiece to form a slender capillary into the workpiece, denoted as a keyhole, as well as violent plasma generation which consists of metal vapour, ionized atoms, and free electrons. Plasma resides both outside and inside the keyhole, known as plasma plume and keyhole plasma, respectively. In this paper, we quantitatively characterize the plasma absorption of a laser beam inside the keyhole based on photodiode measurements and spectroscopic measurements in 20 kW-class CO2 laser welding processes. The results show that the plasma absorption of a laser beam cannot be neglected in certain welding conditions. Furthermore, this plasma absorption mainly occurs in the top portion of the keyhole, resulting in a wider weld shape in the top portion of the weld bead

Availability note (English)

Available online at http://stacks.iop.org/0022-3727/36/192/d30219.pdf or at the Web site for the Journal of Physics. D, Applied Physics (ISSN 1361-6463) http://www.iop.org/

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Physics. D, Applied Physics
Journal Volume
36
Journal Issue
2
Journal Page Range
p. 192-203
ISSN
0022-3727
CODEN
JPAPBE

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
34021357
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
ABSORPTION; CARBON DIOXIDE LASERS; IONIZED GASES; LASER RADIATION; PHOTODIODES; PLASMA; WELDING
Descriptors DEC
ELECTROMAGNETIC RADIATION; FABRICATION; FLUIDS; GAS LASERS; GASES; JOINING; LASERS; RADIATIONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SORPTION