Published May 1980
| Version v1
Journal article
Deflection of a γ-radiation beam produced by 900 MeV channeled electrons in a bent crystal
Creators
- 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki
Description
The angular distributions of photons produced by 900 MeV electrons channeled along the <111> axis of a silicon crystal were measured. A broadening of the angular distributions was observed in a bent crystal with radius R = 76 cm, which was caused most probably by the deflection of the channeled electron beam. (orig.)
Additional details
Publishing Information
- Journal Title
- Phys. Lett., A
- Journal Volume
- 77
- Journal Issue
- 4
- Series
- Phys. Lett., A.
- Journal Page Range
- 263-265
- ISSN
- 0375-9601
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 11553510
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; CRYSTAL STRUCTURE; ELECTRON BEAMS; ELECTRON CHANNELING; GAMMA RADIATION; MEV RANGE 100-1000; SILICON
- Descriptors DEC
- BEAMS; CHANNELING; DISTRIBUTION; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; RADIATIONS; SEMIMETALS