Published February 21, 1989 | Version v1
Patent Metadata-only

Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces

Creators

Description

A method is described for promoting oxidation of a silicon or gallium arsenide surface comprising: depositing a ytterbium overlayer on the silicon or gallium arsenide surface prior to the oxidation of the surface

Availability note (English)

Patent and Trademark Office, Box 9, Washington, DC 20232.

Additional details

Publishing Information

Imprint Pagination
vp.
IPC:
Int. Cl. H01L 21/302; H01L 21/46.
IPC
Int. Cl. H01L 21/302; H01L 21/46.
Patent number
US patent document 4,806,505/A/

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
20063387
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Non-conventional Literature
Descriptors DEI
DEPOSITION; FABRICATION; GALLIUM ARSENIDES; OXIDATION; SAMARIUM; SILICON; SURFACES; YTTERBIUM
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CHEMICAL REACTIONS; ELEMENTS; GALLIUM COMPOUNDS; METALS; RARE EARTHS; SEMIMETALS