Published August 1, 2017 | Version v1
Journal article

A 500–600 MHz GaN power amplifier with RC–LC stability network

  • 1. School of Microelectronics, Xidian University, Xi'an 710071 (China)

Description

A 500–600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC–LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC–LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500–600 MHz, 300 μ s, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/38/8/085003

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
38
Journal Issue
8
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
49095038
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DESIGN; EFFICIENCY; GAIN; GALLIUM NITRIDES; INSTABILITY; MHZ RANGE; POWER AMPLIFIERS; STABILITY
Descriptors DEC
AMPLIFICATION; AMPLIFIERS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES