Published August 1, 2017
| Version v1
Journal article
A 500–600 MHz GaN power amplifier with RC–LC stability network
Creators
- 1. School of Microelectronics, Xidian University, Xi'an 710071 (China)
Description
A 500–600 MHz high-efficiency, high-power GaN power amplifier is designed and realized on the basis of the push-pull structure. The RC–LC stability network is proposed and applied to the power amplifier circuit for the first time. The RC–LC stability network can significantly reduce the high gain out the band, which eliminates the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5 dBm (700 W) output power with a 17 dB gain and 85% PAE at 500–600 MHz, 300 μ s, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/38/8/085003Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 38
- Journal Issue
- 8
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 49095038
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DESIGN; EFFICIENCY; GAIN; GALLIUM NITRIDES; INSTABILITY; MHZ RANGE; POWER AMPLIFIERS; STABILITY
- Descriptors DEC
- AMPLIFICATION; AMPLIFIERS; ELECTRONIC EQUIPMENT; EQUIPMENT; FREQUENCY RANGE; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES