Distribution across the channel of defects induced by nitrogen bombardment in silicon

Silicon crystals have been implanted at room temperature with 3.2times1015 ions/cm2 of 300-keV N+. The spatial distribution of displaced atoms has been determined by the backscattering energy spectra as a function of the crystal tilting angle with respect to the <111> axis. The changes in the extracted depth profiles have been correlated to the nonuniform distribution of defects across the channel. The radial distribution of displaced atoms has been determined on the basis of the flux-peaking treatment for impurity lattice location