Optoelectronic Properties of Si1-XGeX Binary Semi-Conducting Alloys Under The Influence of Temperature And Pressure

This work is concerned with the temperature and pressure dependent of the electronic energy band structures based on local pseudo-potential method. The band structure of Si1-xGex alloy is calculated in the virtual crystal approximation using the empirical pseudo-potential method which incorporates compositional disorder as an effective potential. Monotonic decreasing and increasing functions are obtained for the temperature and pressure dependent form factors respectively. Some physical quantities as band gaps, bowing parameters, refractive indices, and dielectric constants of the considered alloy with different Ge concentration are calculated under the effects of temperature and pressure. The results obtained are found in good agreement with the experimental and published data