Optimisation of a smooth multilayer nickel silicide surface for ALN growth

For use in thin film electroacoustic (TEA) technology a few hundred nanometre thick nickel silicide (NiSi) electrode would need to be fabricated. A complete fabrication process for the formation of over 200 nm thick silicide films has been optimised for use as an electroacoustic electrode. Optimisation of silicidation temperature and identification of the mono phase of silicide is demonstrated. Thick electrodes are formed by depositing multilayers of silicon and nickel pairs onto silicon (Si) substrates before rapid thermal annealing. The numbers of multilayers and relative material thicknesses are optimized for both surface roughness and electrical resistivity. The growth of textured aluminium nitride (AlN) has been investigated on the optimised surfaces