Published July 1993
| Version v1
Miscellaneous
Restricted
Irradiation effects of neutrons and electrons in semiconductors
- 1. Kyoto Univ. (Japan). Faculty of Engineering
Description
Silicon single crystal wafers were irradiated by 1 MeV electrons and by neutrons with different energy spectra. After irradiation, we measured the electrical resistivity and the concentration of defects in deep levels by the deep level transient spectroscopy (DLTS) and the isothermal capacitance transient spectroscopy (ICTS). Measured results are presented and compared each other. (author)
Files
Restricted
The record is publicly accessible, but files are restricted to users with access.
Additional details
Publishing Information
- Imprint Title
- Annual report of Radiation Laboratory Department of Nuclear Engineering Faculty of Engineering, Kyoto University
- Imprint Pagination
- 156 p.
- Journal Page Range
- p. 30-32.
- Report number
- INIS-JP--028
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 26046694
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; MONOCRYSTALS; NEUTRON BEAMS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILICON
- Descriptors DEC
- BEAMS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL PROPERTIES; ELEMENTS; LEPTON BEAMS; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS