Published February 15, 1978
| Version v1
Journal article
Analysis of anodically oxidized InP by MeV 4He+ channeling effect measurements and Auger electron spectrometry
- 1. California Inst. of Tech., Pasadena (USA)
- 2. Naval Ocean Systems Center, San Diego, California, USA
Description
Ion channeling techniques have been used to analyze anodically oxidized layers on (111) surfaces on InP single crystals. These measurements indicate total concentrations of In, P and O in the proportions 1.0:1.0:3.9, respectively. The concentrations of In and P vary with respect to depth into the oxide. These results are compared to ion-sputtered Auger electron spectrometry. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Nuclear Instruments and Methods
- Journal Volume
- 149
- Journal Issue
- 1-3
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 659-662
- ISSN
- 0029-554X
Conference
- Title
- 3. international conference on ion beam analysis.
- Dates
- 27 Jun - 1 Jul 1977.
- Place
- Washington, D.C., USA.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 9384707
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; HELIUM IONS; INDIUM PHOSPHIDES; ION CHANNELING; LAYERS; MEV RANGE 01-10; MONOCRYSTALS; N-TYPE CONDUCTORS; OXIDATION; QUANTITY RATIO; SURFACES
- Descriptors DEC
- CHANNELING; CHARGED PARTICLES; CHEMICAL REACTIONS; CRYSTALS; ELECTRON SPECTROSCOPY; ENERGY RANGE; INDIUM COMPOUNDS; IONS; MEV RANGE; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR MATERIALS; SPECTROSCOPY
Optional Information
- Notes
- Updated automatically by Metadata and Full-Text Enrichment Agent