Published 1988
| Version v1
Book
Dangling-bond states in a-Si,Ge:H,F measured by temperature-dependent μtau
Creators
- 1. Princeton Univ., NJ (USA). Dept. of Electrical Engineering and Computer Science
Description
The authors report a new technique for measuring the density distribution of the D0-/ state in a-Si:H before and after light soaking and in a-Si,Ge:H,F alloys. Electron time-of-flight (TOF) measurements as a function of temperature from the basis of their new technique. The deep trapping of electrons controls the mobility-lifetime product (μtau)n, which is evaluated from the integrated TOF current. The dominant deep trap is the D0-/ level. The authors obtain the density of D0-/ states in a-Si,Ge:H,F which peak at Ec-(0.40 to 0.45) eV, with maxima in the 1018 to 1019 cm-3eV-1 range. In a-Si:H, the peak lies at Ec-0.45 eV; they observe its growth with increasing light-soaking time
Additional details
Publishing Information
- Publisher
- IEEE Service Center.
- Imprint Place
- Piscataway, NJ (USA)
- Imprint Title
- Twentieth IEEE photovoltaic specialists conference, 1988
- Imprint Pagination
- 1671 p.
- Series
- Volume 1-2.
- Journal Page Range
- p. 135-138.
Conference
- Title
- 20. IEEE photovoltaic specialists conference.
- Dates
- 26-30 Sep 1988.
- Place
- Las Vegas, NV (USA).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 21013725
- Subject category
- S36: MATERIALS SCIENCE; S74: ATOMIC AND MOLECULAR PHYSICS; S74: ATOMIC AND MOLECULAR PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER LIFETIME; ELECTRON MOBILITY; FLUORINE; GERMANIUM ALLOYS; HYDROGENATION; PHASE STUDIES; SILICON ALLOYS; TEMPERATURE DEPENDENCE; TIME-OF-FLIGHT METHOD; TRAPPING
- Descriptors DEC
- ALLOYS; CHEMICAL REACTIONS; ELEMENTS; HALOGENS; LIFETIME; MOBILITY; NONMETALS; PARTICLE MOBILITY
Optional Information
- Secondary number(s)
- CONF-880965--.