Magnesium composition effect on UV-sensing performance of MgxZn1−xO-based solidly mounted bulk acoustic resonator
Creators
- 1. Shanghai Jiaotong University. Key Laboratory for Thin Film and Microfabrication of the Ministry of Education, School of Electronic Information and Electrical Engineering (China)
- 2. Beijing Municipal Institute of Labour Protection (China)
- 3. Shandong University of Science and Technology. College of Electronics and Information Engineering (China)
Description
Magnesium-doped zinc oxide (MgxZn1−xO) is a ternary compound formed by alloying ZnO and MgO. A series of Mg-doped ZnO-based solidly mounted resonators (SMRs) with a lateral co-planar electrode was fabricated by radio-frequency magnetron sputtering PVD deposition for UV-sensing application in this report. The SMRs were developed with 4 levels tuning Mg composition from 0 to 25% atomic ratio to optimize the device performance. Investigation of the Mg-doped ZnO thin films for the SMR device performance and the UV-sensing performance comparison between pure ZnO and Mg-doped ZnO SMR were conducted through scanning electron microscopy, X-ray diffraction, UV–visible transmittance spectrum, network analyzer (NWA), and UV illumination with different Mg-doping concentration. With Mg-doping concentration of 13 at.%, the parallel resonant frequency at 2129.78 MHz performed Qp, , and TCFp (temperature coefficient of frequency) of 301.26, 2.9%, and − 9.71 ppm/℃, respectively. Since Mg impurity exists in the piezoelectric film, the chemical activity with oxygen gas was enhanced, and then UV-sensing responsivity was + 16.9 Hz/μW/cm2 increased beyond 50% averagely than pure ZnO SMRs. From the results, it could be concluded that appropriate Mg composition dramatically improve the resonant and UV-sensing performance of MgxZn1−xO SMR device simultaneously based on synergy effect between chemical activity and piezoelectric property, which provides a new solution for miniaturization of portable UV sensors.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 31
- Journal Issue
- 7
- Journal Page Range
- p. 5511-5520
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55074272
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- DOPED MATERIALS; MAGNESIUM; MAGNESIUM OXIDES; MAGNETRONS; PERFORMANCE; PHYSICAL VAPOR DEPOSITION; PIEZOELECTRICITY; RADIOWAVE RADIATION; SCANNING ELECTRON MICROSCOPY; SENSORS; SPUTTERING; THIN FILMS; X-RAY DIFFRACTION; ZINC NITRATES; ZINC OXIDES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ALKALINE EARTH METALS; CHALCOGENIDES; COHERENT SCATTERING; DEPOSITION; DIFFRACTION; ELECTRICITY; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON TUBES; ELECTRONIC EQUIPMENT; ELEMENTS; EQUIPMENT; FILMS; MAGNESIUM COMPOUNDS; MATERIALS; METALS; MICROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; NITRATES; NITROGEN COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SCATTERING; SURFACE COATING; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2020 © Springer Science+Business Media, LLC, part of Springer Nature 2020