Published 2009 | Version v1
Miscellaneous

Photoluminescence of ZnTe nanowires prepared by electrochemical etching of bulk ZnTe

  • 1. Technical Univ. of Moldova, Chisinau (Moldova, Republic of)
  • 2. Academy of Transport, Informatics and Communications, MD-2002, Chisinau (Moldova, Republic of)
  • 3. Inst. of Applied Physics, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of)
  • 4. Inst. of Electronic Engineering and Industrial Technologies, Academy of Sciences of Moldova, Chisinau (Moldova, Republic of)
  • 5. Technival Univ. of Moldova, Chisinau (Moldova, Republic of)

Description

We demonstrate the preparation of ZnTe nanowires with the diameter of 50 nm from bulk p-type ZnTe by means of electrochemical treatment in a pulse regime. The nanowires demonstrate photoluminescence characteristics identical to those of the initial bulk material. The luminescence is shown to come from recombination of excitons bound to an acceptor and from recombination of two types of donor-acceptor pairs involving a shallow acceptor and two species of donors, one of which is shallow, and another one is deep. Since the initial crystals are doped with Na, it is suggested that the acceptor involved in all these transitions is related to Na. (authors)

Part of:
ICMCS-2009: 6. international conference on microelectronics and computer science. Proceedings

Additional details

Publishing Information

Publisher
Technical University of Moldova
Imprint Place
Chisinau (Moldova, Republic of)
ISBN
978-9975-45-045-4; 978-9975-45-122-2
Imprint Title
ICMCS-2009: 6. international conference on microelectronics and computer science. Proceedings
Imprint Pagination
524 p.
Journal Page Range
p. 150-153
Report number
INIS-MD--010

Conference

Title
6. international conference on microelectronics and computer science
Acronym
ICMCS-2009
Dates
1-3 Oct 2009
Place
Chisinau (Moldova, Republic of)

Optional Information

Notes
20 refs., 3 figs.