Published 1993 | Version v1
Book Metadata-only

Influence of electric field on the formation of neutron, electron and γ-ray radiation defects in silicon

Creators

  • 1. Nanjing Univ. (China). Dept.of Physics
  • 2. Hebei Semiconductor Research Inst. (China)

Description

The influence of an electric field on the formation of radiation-induced defects in silicon irradiated respectively with γ-ray, electrons and neutrons has been investigated using the DLTS method. It is found that the application of an electric field across the p-n junction during irradiation can reduce the formation efficiency of A-centers, divacancies and E3 (Ec-0.37 eV) defects, and that the concentration of radiation defects in the junction depletion region is lower than that in the quasineutral bulk. The formation characteristics of radiation defects in the depletion region could be related mainly to the transformation of the charge states of the defects caused by the electric field

Part of:
Beam solid interactions: Fundamentals and applications

Additional details

Publishing Information

Publisher
Materials Research Society.
Imprint Place
Pittsburgh, PA (United States)
ISBN
1-55899-174-3
Imprint Title
Beam solid interactions: Fundamentals and applications
Imprint Pagination
932 p.
Journal Page Range
p. 117-122.

Conference

Title
16. Materials Research Society (MRS) fall meeting.
Dates
30 Nov - 5 Dec 1992.
Place
Boston, MA (United States).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
25036105
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
CRYSTAL DEFECTS; ELECTRIC FIELDS; EXPERIMENTAL DATA; PHYSICAL RADIATION EFFECTS; SILICON; SPECTROSCOPY
Descriptors DEC
CRYSTAL STRUCTURE; DATA; ELEMENTS; INFORMATION; NUMERICAL DATA; RADIATION EFFECTS; SEMIMETALS

Optional Information

Secondary number(s)
CONF-921101--.