Published April 23, 2007
| Version v1
Journal article
Magnetoresistive sensors
- 1. Instituto Superior Tecnico (IST), Physics Department, Av. Rovisco Pais, 1096 Lisbon (Portugal)
- 2. Instituto de Engenharia de Sistemas de Computadores-Microsystems and Nanotechnology (INESC-MN), Rua Alves Redol, n09-10, 1000-029 Lisbon (Portugal)
Description
Magnetoresistive sensors using spin valves and magnetic tunnel junctions are reviewed, considering applications as readers in hard disk drives, as well as applications where the ultimate field detection limits are required (from nT down to pT). The sensor noise level in quasi-DC or high-frequency applications is described, leading to sensor design considerations concerning biomedical and read head applications. Magnetic tunnel junction based sensors using MgO barriers appear as the best candidates for ultra-low field (pT) detection, either in the high-frequency regime, or for quasi-DC applications
Additional details
Identifiers
- DOI
- 10.1088/0953-8984/19/16/165221;
- PII
- S0953-8984(07)34484-6;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 19
- Journal Issue
- 16
- Journal Page Range
- p. 165221
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38078229
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- MAGNESIUM OXIDES; MAGNETIC DISKS; MAGNETORESISTANCE; NOISE; SENSITIVITY; SPIN; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT; VALVES
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; ANGULAR MOMENTUM; CHALCOGENIDES; CONTROL EQUIPMENT; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; EQUIPMENT; FLOW REGULATORS; MAGNESIUM COMPOUNDS; MAGNETIC STORAGE DEVICES; MEMORY DEVICES; OXIDES; OXYGEN COMPOUNDS; PARTICLE PROPERTIES; PHYSICAL PROPERTIES