Published August 1970 | Version v1
Journal article Metadata-only

Copper-doped radiation-resistant n/p-type silicon solar cells

Creators

  • 1. Nagoya Inst. of Tech. (Japan). Dept. of Electronics

Description

no abstract available

Additional details

Identifiers

DOI
10.1016/0038-1101(70)90132-2;

Publishing Information

Journal Title
Solid-State Electronics
Journal Volume
13
Journal Issue
8
Series
Solid-State Electron.
Journal Page Range
1202-1204
ISSN
0038-1101

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
2005115
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Progress Report
Descriptors DEI
COPPER; CRYSTAL DOPING; RADIATION EFFECTS; N-TYPE CONDUCTORS; P-TYPE CONDUCTORS; SILICON; SOLAR CELLS; BORON; GAMMA RADIATION; CURRENTS; ELECTRICITY; POWER; RESISTORS; CARRIER MOBILITY

Optional Information

Notes
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