Published April 2, 2008
| Version v1
Journal article
Lattice thermal conductivity of SiC nanowires
Creators
- 1. Institute of Microelectronics, NCSR 'Demokritos' GR-15310 Athens (Greece)
Description
We present non-equilibrium classical molecular dynamics simulations for the lattice thermal transport of SiC nanowires and bulk β-SiC. The thermal conductivity of the nanowires is strongly reduced compared to the SiC bulk value. In our approach only the phonon contribution to the heat flow is considered, neglecting any electronic components. We investigate the dependence of the thermal conductivity on the wire cross section and consider the influence of different wire surfaces on the thermal transport
Availability note (English)
Available from http://dx.doi.org/10.1088/0953-8984/20/13/135201Additional details
Identifiers
- DOI
- 10.1088/0953-8984/20/13/135201;
- PII
- S0953-8984(08)58352-4;
Publishing Information
- Journal Title
- Journal of Physics. Condensed Matter
- Journal Volume
- 20
- Journal Issue
- 13
- Journal Page Range
- [6 p.]
- ISSN
- 0953-8984
- CODEN
- JCOMEL
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39108582
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CROSS SECTIONS; HEAT FLUX; MOLECULAR DYNAMICS METHOD; PHONONS; QUANTUM WIRES; SILICON CARBIDES; SIMULATION; SURFACES; THERMAL CONDUCTIVITY; WIRES
- Descriptors DEC
- CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; NANOSTRUCTURES; PHYSICAL PROPERTIES; QUASI PARTICLES; SILICON COMPOUNDS; THERMODYNAMIC PROPERTIES