Published September 16, 1993
| Version v1
Journal article
Thermal effects in CuInTe2/CdS/ITO heterojunctions
Description
CuInTe2 thin films and heterojunctions with CdS were grown, using a close-spaced vapor transport technique. These heterojunctions show a weak photovoltaic effect (open circuit photovoltage: ∼ 30 mV) which increases up to ∼ 200 mV when the junction temperature increases up to 90 C. Then the photovoltage decreases if the temperature is increased above 100 C. This phenomenon is reversible, and the photovoltage is very sensitive to the junction temperature. X-ray and electron microprobe studies showed us that the CuInTe2 films are in fact very deficient in copper and formed of at least two phases: CuInTe2 and In2Te3. We obtained similar results with films grown from CuIn(Se, Te)2, CuGaTe2, and CuGa(Se, Te)2 materials. (orig.)
Additional details
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applied Research
- Journal Volume
- 139
- Journal Issue
- 1
- Journal Page Range
- p. K45-K46.
- ISSN
- 0031-8965
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 25021464
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CADMIUM SULFIDES; COPPER TELLURIDES; ELECTRIC CONDUCTIVITY; ELECTRON MICROPROBE ANALYSIS; FILMS; HETEROJUNCTIONS; INDIUM TELLURIDES; PHOTOVOLTAIC EFFECT; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL ANALYSIS; COPPER COMPOUNDS; ELECTRICAL PROPERTIES; INDIUM COMPOUNDS; MICROANALYSIS; NONDESTRUCTIVE ANALYSIS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SULFIDES; SULFUR COMPOUNDS; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS