Published August 15, 2007
| Version v1
Journal article
Growth of β-FeSi2 thin films on β-FeSi2 (110) substrates by molecular beam epitaxy
Creators
- 1. Graduate School of Science and Engineering, Ibaraki University 4-12-1 Nakanarusawa, Hitachi, Ibaraki (Japan)
- 2. Graduate School of Engineering, The University Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo (Japan)
- 3. Japan Atomic Energy Agency, 2-4 Shirakata-Shirane, Tokai, Ibaraki (Japan)
Description
We have investigated the preparation of β-FeSi2 substrate and growth condition of β-FeSi2 thin film on β-FeSi2 (110) substrate by molecular beam epitaxy. The surface of the substrate was prepared by a wet-etching using HF(50%):HNO3(60%):H2O = 1:1:5 solution at 25 deg. C. It is clear that the optimal etching period to obtain a flat surface was 3 min. The β-FeSi2 thin film with streak RHEED pattern was obtained at Si/Fe flux ratio of 2.9. Average surface roughness (Ra) of the β-FeSi2 film was about 0.5 nm in 5 x 5 μm2 area
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2007.02.040Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2007.02.040;
- PII
- S0040-6090(07)00198-8;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 515
- Journal Issue
- 22
- Journal Page Range
- p. 8197-8200
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- Asia-Pacific conference on semiconducting silicides science and technology towards sustainable optoelectronics
- Acronym
- APAC-SILICIDE 2006
- Dates
- 29-31 Jul 2006
- Place
- Kyoto (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39069175
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; ELECTRON DIFFRACTION; ETCHING; HYDROFLUORIC ACID; IRON SILICIDES; MOLECULAR BEAM EPITAXY; NITRIC ACID; SURFACES; THIN FILMS; WATER
- Descriptors DEC
- COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; FILMS; FLUORINE COMPOUNDS; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; IRON COMPOUNDS; MICROSCOPY; NITROGEN COMPOUNDS; OXYGEN COMPOUNDS; SCATTERING; SILICIDES; SILICON COMPOUNDS; SURFACE FINISHING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2007 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.