Laser Irradiation and Temperature Annealing of CuO–Cu₂O Complex Thin Films

CuO–Cu₂O complex thin films were synthesised on glass and p-type Si substrates through the dip-coating method. A precursor solution was prepared by dissolving CuCl₂·6H₂O powder in methanol. The films were deposited through the dip-coating method and dried at 430 K. One group of samples was irradiated with a green laser (λ = 540 nm, 10 W), and another group of samples was annealed at 530 K or 630 K. Fourier-transform infrared spectroscopy confirmed the presence of the functional groups of CuO and Cu₂O. X-ray diffraction and ultraviolet–visible spectroscopy were used to investigate the structural and optical properties of the films. The effects of laser irradiation and annealing temperature on the films were discussed. Results indicated that the deposited CuO–Cu₂O complex films were resistive, and Au enabled Ohmic contact.