Published 1993 | Version v1
Book

Planar channeling radiation from relativistic electrons and positrons in silicon

  • 1. University of Hyderabad, Hyderabad (India). School of Physics

Description

Short communication. 5 refs., 2 tabs

Part of:
Proceedings of the solid state physics symposium. Vol. 35C

Additional details

Publishing Information

Publisher
Bhabha Atomic Research Centre.
Imprint Place
Bombay (India)
Imprint Title
Proceedings of the solid state physics symposium. Vol. 35C
Imprint Pagination
527 p.
Journal Page Range
p. 163.

Conference

Title
Solid state physics symposium.
Dates
24 Dec 1992 - 1 Jan 1993.
Place
Tirupati (India).

INIS

Country of Publication
India
Country of Input or Organization
India
INIS RN
26046281
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ELECTRON CHANNELING; ELECTRONS; PEAKS; POSITRON CHANNELING; POSITRONS; RELATIVISTIC RANGE; SILICON
Descriptors DEC
ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; CHANNELING; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; LEPTONS; MATTER; SEMIMETALS

Optional Information