Published 2000
| Version v1
Journal article
Kinetic secondary ion emission from silicon
- 1. Moskovskij Gosudarstvennyj Univ., Moscow (Russian Federation)
Description
One studied the secondary emission of Si+, Si2+ and Si++ silicon ions at Si polycrystal surface bombardment by E0 = 2 and 10 keV energy Ar+ ion beam. The energy spectra of secondary ions were determined for various angles of emergence from the target. The analysis of spectra and of emission variation depending on the energy of primary ions showed the essential contribution (up to 80% for E0 = 10 keV) of kinetic mechanism into the formation of Si+ silicon secondary ions
Abstract (Russian)
Исследована вторичная эмиссия ионов кремния Si+, Si2+ и Si++ при бомбардировке поверхности поликристалла Si пучком ионов Ar+ с энергией Е0 2 и 10 кэВ. Получены энергетические спектры вторичных ионов для разных углов выхода из мишени. Анализ спектров и изменения эмиссии в зависимости от энергии первичных ионов свидетельствует о значительном вкладе (до 80% для Е0 = 10 кэВ) кинетического механизма в образование вторичных ионов кремния Si+Additional details
Additional titles
- Original title (Russian)
- Кинетическая вторичная ионная эмиссия кремния
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 64
- Journal Issue
- 4
- Journal Page Range
- p. 665-671
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- 14. International conference on ion surface interaction
- Original Conference Title
- 14. Mezhdunarodnaya konferentsiya po vzaimodejstviyu ionov s poverkhnost'yu
- Dates
- 30 Aug - 4 Sep 1999
- Place
- Zvenigorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 32017641
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANGULAR DISTRIBUTION; ARGON IONS; ENERGY DEPENDENCE; ENERGY SPECTRA; ION EMISSION; ION IMPLANTATION; KEV RANGE 01-10; MASS SPECTRA; SECONDARY EMISSION; SILICON; SILICON IONS
- Descriptors DEC
- CHARGED PARTICLES; DISTRIBUTION; ELEMENTS; EMISSION; ENERGY RANGE; IONS; KEV RANGE; SEMIMETALS; SPECTRA
Optional Information
- Notes
- 18 refs., 3 figs.