Kinetics of accumulation and annealing of surface states on the interface of silicon-silicon oxide structures under irradiation

Data on kinetics of accumulation and annealing of surface states (SS) at siliconsilicon oxide interface of MOS transistor structures after 6 MeV energy electron 5x1014-1017 sm-2 fluxes are obtained using technique of sunthreshold VAC readout. Two maxima are observed within SS density distribution: the first one is near Ev+0.35 eV, the second - near Ec - 0.34 eV. SS density flow dependences are determined to have maximum near 5x1015cm-2. Kinetics of SS density isothermal annealing at 200 deg C temperature in air medium is shown to have two-stage character: abrupt reduction of SS density occurs during initial 20 min, then one can see its slow variation. Time dependence of SS density approximates by the exponent sum. Possible models which explain the observed flow and time dependences qualitatively are given