Published March 2009 | Version v1
Journal article

Pull-in voltage uniformity analysis of digitally operated micro mirror array with torsional springs

  • 1. School of Electrical Engineering and Computer Science, Seoul National University, 301-1118(no. 007), Gwanak PO Box 34, Seoul 151-600 (Korea, Republic of)

Description

This paper reports on the analysis and characterization of the pull-in voltage (PV) uniformity for a digitally operated micro mirror array (MMA). The designed micro mirror has a square mirror plate of dimension 210 µm, two torsional springs 42 µm long, and is operated by an electrostatic force. A numerical analysis of the PV was performed by calculating its variations with respect to four-dimensional parameters, namely, the spring width (ws), the spring thickness (ts), the mirror gap (Z0) and the level of misalignment (dm). The spring width and spring thickness are the dominant factors for obtaining uniform PVs, assuming the spring thickness and the mirror gap are independent of each other, but the remaining silicon thickness becomes more important if the spring thickness and the mirror gap are correlated with each other. Two kinds of silicon substrates were used for the silicon structures to compare the silicon thickness effects. The bonding temperature of silicon on glass (SiOG) wafers has been optimized at 370 °C in order to minimize the wafer bow due to the difference of the thermal expansion between the silicon and the glass wafers; however, the normalized standard deviation of PVs of all micro mirrors was much higher (20.8%) than the results of the SOI wafers (7.2%). The severe deformation of the spring widths was alleviated by changing the final release process from the sample level to the wafer level. Finally, the misalignments inside a wafer were analyzed by comparing the left and right side PV difference to find that misalignments of 5.1 µm existed

Availability note (English)

Available from http://dx.doi.org/10.1088/0960-1317/19/3/035006

Additional details

Identifiers

DOI
10.1088/0960-1317/19/3/035006;
PII
S0960-1317(09)92334-8;

Publishing Information

Journal Title
Journal of Micromechanics and Microengineering. Structures, Devices and Systems
Journal Volume
19
Journal Issue
3
Journal Page Range
[11 p.]
ISSN
0960-1317
CODEN
JMMIEZ

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44099352
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ELECTRIC POTENTIAL; FABRICATION; MIRRORS; SILICON; SPRINGS; THICKNESS
Descriptors DEC
DIMENSIONS; ELEMENTS; MACHINE PARTS; SEMIMETALS