Large electromechanical strain and electrostrictive effect in (1 − x)(Bi0.5Na0.5TiO3–SrTiO3)–xLiNbO3 ternary lead-free piezoelectric ceramics
Creators
- 1. Nanjing University, National Laboratory of Solid State Microstructures, College of Engineering and Applied Sciences (China)
- 2. Nanjing University of Aeronautics and Astronautics, Department of State Key Laboratory of Mechanics and Control of Mechanical Structures (China)
Description
Lead-free (1 − x)(0.8Bi0.5Na0.5TiO3–0.2SrTiO3)–xLiNbO3 (BNST–xLN, x = 0–0.08) piezoelectric ceramics were fabricated by a solid-state sintered technology. The effects of LN-doping on the structural and electrical properties of the BNST–xLN system were systematically investigated. The results of Raman spectroscopy revealed that the substitution of LN softens the phonon vibrations in the BNST–xLN system, in accordance with the remarkable reduction in the phase transition temperature (TF−R), remnant polarization (Pr), negative strain (Sneg) and piezoelectric coefficient (d33). However, the degradation of the long-range ferroelectric orders was accompanied by a significant increase in the electric field–induced strain response. At x = 0.04, a maximum unipolar strain of ~ 0.36% with a corresponding normalized strain (Smax/Emax) of ~ 600 pm/V was obtained at room temperature, which should be mainly ascribed to the reversibly electric field-induced phase transition between the ergodic relaxor and ferroelectric phases due to their comparable free energies in the two-phase coexistence region. Moreover, it was also found that the BNST–xLN system processes predominant electrostrictive behaviors with relatively high electrostrictive coefficient (Q33) and excellent temperature stability when the field-induced phase transition cannot be trigged by the applied electric field, as evidenced by a fact that the Q33 value of BNST–0.08LN ceramic keeps almost constant as high as ~ 0.028 m4/C2 in the temperature range from room temperature to 120 °C.
Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Materials Science. Materials in Electronics
- Journal Volume
- 30
- Journal Issue
- 1
- Journal Page Range
- p. 200-211
- ISSN
- 0957-4522
- CODEN
- JSMEEV
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52016881
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CERAMICS; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; FERROELECTRIC MATERIALS; FREE ENERGY; LITHIUM COMPOUNDS; NIOBATES; NIOBIUM OXIDES; PHASE TRANSFORMATIONS; PIEZOELECTRICITY; RAMAN SPECTROSCOPY; STRAINS; STRONTIUM TITANATES; TRANSITION TEMPERATURE
- Descriptors DEC
- ALKALI METAL COMPOUNDS; ALKALINE EARTH METAL COMPOUNDS; CHALCOGENIDES; DIELECTRIC MATERIALS; ELECTRICITY; ENERGY; LASER SPECTROSCOPY; MATERIALS; NIOBIUM COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; REFRACTORY METAL COMPOUNDS; SPECTROSCOPY; STRONTIUM COMPOUNDS; THERMODYNAMIC PROPERTIES; TITANATES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2019 Springer Science+Business Media, LLC, part of Springer Nature