Published April 2002
| Version v1
Journal article
Analysis of multilayer film using RBS/channeling, sputtering/RBS and SIMS
- 1. Fudan Univ., Shanghai (China). Inst. of Modern Physics, Applied Ion Beam Physics Laboratory
- 2. Fudan Univ., Shanghai (China). Dept. of Material Science, National Micro-analysis Center for Microelectronic Materials and Devices
- 3. Yunnan Univ., Kunming (China). Dept. of Physics
Description
RBS/Channeling, Sputtering/RBS and SIMS analysis have been performed on the MBE-grown Si/GexSi1-x multilayer. The thickness, atomic ratio and crystalline perfectness of the epitaxial layer are determined by 2 MeV 4He+ RBS/Channeling analysis. By sputter etching of the sample with low energy Ar+ ions, the thickness of epitaxial layer is reduced. Then RBS analysis of 2 MeV 4He+ ions on the etched sample yields information about the deeper layers, the interface of the multilayer samples and the concerned phenomena induced by sputter etching. The periodical structure of Si/GexSi1-x multilayer samples is clearly identified by the SIMS analysis before and after sputter etching
Additional details
Publishing Information
- Journal Title
- Journal of Fudan University, Natural Science
- Journal Volume
- 41
- Journal Issue
- 2
- Journal Page Range
- p. 140-144
- ISSN
- 0427-7104
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 34024108
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BACKSCATTERING; FILMS; GERMANIUM; ION CHANNELING; ION SPECTROSCOPY; MASS SPECTROSCOPY; MOLECULAR BEAM EPITAXY; RUTHERFORD SCATTERING; SILICON; SPUTTERING
- Descriptors DEC
- CHANNELING; CRYSTAL GROWTH METHODS; ELASTIC SCATTERING; ELEMENTS; EPITAXY; METALS; SCATTERING; SEMIMETALS; SPECTROSCOPY