Low-energy mass-separated ion beam deposition of materials

A low energy mass-separated ion beam deposition system was developed. Ge+ ions of 100 μA were obtained at an acceleration energy of 100 eV with a beam spot size of 5 mm intersection at 5 x 10-8 Torr. Material buildup has been observed at the range of ion energy where the self-sputtering yield is below unity. The incident ion energy dependence of the reactions of F+ and CF+sub(x) ions with a silicon substrate has been measured, as well as the physical phenomena conventionally observed between impinging ions and a substrate material. Epitaxial growth of Ge films on Ge and Si single crystal substrates has been observed at 3000C with a Ge+ ion energy of 100 eV. Deposited Ge crystal properties were evaluated. (orig.)