Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack
Creators
- 1. Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel)
- 2. Electrical Engineering Department, Technion, Haifa 3200 (Israel)
- 3. Department of Material Science and Engineering, Technion, Haifa 3200 (Israel)
- 4. Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)
Description
We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology
Additional details
Identifiers
- DOI
- 10.1063/1.4932031;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 118
- Journal Issue
- 13
- Journal Page Range
- p. 134504-134504.11
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47062917
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FABRICATION; ILLUMINANCE; METALS; NONLINEAR PROBLEMS; PHOTODETECTORS; SENSORS; VARIABLE CAPACITANCE DIODES
- Descriptors DEC
- ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC