Published October 7, 2015 | Version v1
Journal article

Optically sensitive devices based on Pt nano particles fabricated by atomic layer deposition and embedded in a dielectric stack

  • 1. Russell Berrie Nanotechnology Institute, Technion, Haifa 3200 (Israel)
  • 2. Electrical Engineering Department, Technion, Haifa 3200 (Israel)
  • 3. Department of Material Science and Engineering, Technion, Haifa 3200 (Israel)
  • 4. Photovoltaic Laboratory, Technion, Haifa 3200 (Israel)

Description

We report a series of metal insulator semiconductor devices with embedded Pt nano particles (NPs) fabricated using a low temperature atomic layer deposition process. Optically sensitive nonvolatile memory cells as well as optical sensors: (i) varactors, whose capacitance-voltage characteristics, nonlinearity, and peak capacitance are strongly dependent on illumination intensity; (ii) highly linear photo detectors whose responsivity is enhanced due to the Pt NPs. Both single devices and back to back pairs of diodes were used. The different configurations enable a variety of functionalities with many potential applications in biomedical sensing, environmental surveying, simple imagers for consumer electronics and military uses. The simplicity and planar configuration of the proposed devices makes them suitable for standard CMOS fabrication technology

Additional details

Identifiers

Publishing Information

Journal Title
Journal of Applied Physics
Journal Volume
118
Journal Issue
13
Journal Page Range
p. 134504-134504.11
ISSN
0021-8979
CODEN
JAPIAU

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47062917
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CAPACITANCE; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FABRICATION; ILLUMINANCE; METALS; NONLINEAR PROBLEMS; PHOTODETECTORS; SENSORS; VARIABLE CAPACITANCE DIODES
Descriptors DEC
ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES

Optional Information

Notes
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