Heavy charged particle detectors based on high resistivity epitaxial silicon layers

The fabrication method of the heavy charged particle detectors on the base of high resistivity silicon epitaxial layers is described. The peculiarity of this method is that the rectifying structure is realized on the base of Pd2Si - Si heterojunction. The achieved value of the intrinsic resolution Rint = 13.5 keV for α-particles of 238Pu (Eα 5.49 MeV) gives the evidence for high perspective to use high resistivity epitaxial silicon layers for producing charged particle detectors with good spectrometric performances. (author)