Study of the Influence of Implanted Atoms on the Coefficients of the Sputtering of Silicon and Silicon with a Thin Oxide Film

The results of theoretical and experimental studies of the influence of Ba-atom implantation and the presence of an oxide film on the Si-surface sputtering coefficient under ion bombardment are presented. It is shown that, in the dose range of D = 10¹⁴–5 × 10¹⁵ cm^—2, the Si sputtering coefficient increases linearly, then this increase decelerates, and is almost constant, starting from 10¹⁶ cm^–2. In the range of D = 5 × 10¹⁵–5 × 10¹⁶ cm^—2, the Ba sputtering coefficient increases sharply, which is explained by an increase in the Ba concentration in the surface layer during the ion bombardment process.