Annealing of ion implanted 4H-SiC in the temperature range of 100-800 oC analysed by ion beam techniques

Ion implantation induced damage formation and subsequent annealing in 4H-SiC in the temperature range of 100-800 oC has been investigated. Silicon Carbide was implanted at room temperature with 200 keV 40Ar ions with two implantation fluences of 4 x 1014 and 2 x 1015 ions/cm2. The samples were characterized by Rutherford backscattering and nuclear reaction analysis techniques in channeling mode using 2.00 and 4.30 MeV 4He ion beams for damage buildup and recovery in the Si and C sublattices, respectively. At low ion fluence, the restoration of the Si sublattice is evident already at 200 oC and a considerable annealing step occurs between 300 and 400 oC. Similar results have been obtained for the C sublattice using the nuclear resonance reaction for carbon, 12C(α,α)12C at 4.26 MeV. For samples implanted with the higher ion fluence, no significant recovery is observed at these temperatures.