Published 1980 | Version v1
Book Metadata-only

Metal-silicide formation by ion bombardment induced atomic intermixing

Creators

  • 1. Electrotechnical Lab., Tokyo (Japan)

Description

no abstract available

Additional details

Publishing Information

Publisher
Inst. of Electr. Eng. of Japan.
Imprint Place
Tokyo, Japan
Imprint Title
Proceedings of the fourth symposium on ion sources and ion application technology
Imprint Pagination
388 p.
Journal Page Range
p. 155-158.

Conference

Title
4. symposium on ion sources and ion application technology.
Dates
24 - 26 Jun 1980.
Place
Tokyo, Japan.

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
12628307
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, No Abstract
Descriptors DEI
ARGON 40 BEAMS; ATOMS; FILMS; INTERFACES; INTERMETALLIC COMPOUNDS; ION BEAM INJECTION; KEV RANGE; MIXING; NEON 20 BEAMS; NIOBIUM; NIOBIUM SILICIDES; NITROGEN 14 BEAMS; SILICON; SYNTHESIS; TEMPERATURE DEPENDENCE
Descriptors DEC
ALLOYS; BEAM INJECTION; BEAMS; ELEMENTS; ENERGY RANGE; ION BEAMS; METALS; NIOBIUM COMPOUNDS; SEMIMETALS; SILICIDES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS

Optional Information

Notes
Published in summary form only.