Adsorption configuration of AlN on sapphire surface using first-principles calculations
- 1. School of Mechanical Engineering and Automation, Wuhan Textile University, Wuhan 430073 (China)
- 2. Guangdong Zhongyuan Semiconductor Technology Co., Ltd., Foshan 528251 (China)
- 3. School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)
- 4. School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China)
Description
Highlights: • Adsorption configuration of AlN on sapphire is investigated. • Al atom, N atom, and AlN molecules all form chemical bonds with substrate atoms. • AlN with N atom closer to sapphire surface has the largest charge transfer and most complex bonding with substrate atoms. • The bonds are formed deviating from the sapphire hexagon at an angle of about 30° or 60° when AlN molecule adsorbed. First-principles calculations of Al atom, N atom, and AlN molecule adsorption on sapphire surface have been carried out to explain the atomic-scale insight into the initial adsorption processes of AlN deposition on sapphire substrate. The results reveal that Al atom, N atom, and AlN molecule all form chemical bonds with substrate atoms when adsorbed on sapphire surface. Moreover, the bonding between AlN molecules and sapphire substrate are more complex than that of Al atom and N atom. Meanwhile, AlN with N atom closer to sapphire substrate has the largest charge transfer when adsorbed, which is consistent with its most complex bonding with substrate atoms. Furthermore, the bonds are formed deviating from the sapphire hexagon at an angle of about 30° or 60° when AlN molecule adsorbed. As a result, the lattice constant after the bonding of AlN shrinks and is closer to that of AlN, which directly reduces the crystal mismatch between AlN and sapphire. Thus, it is easier to obtain a template with a lattice closer to AlN. The results obtained provide theoretical guidance for obtaining better templates for growing AlN thin films on sapphire substrate.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.150163Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.150163;
- PII
- S0169433221012393;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 562
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54079167
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ADSORPTION; ALUMINIUM NITRIDES; ATOMS; BONDING; CHEMICAL BONDS; COMPLEXES; CONFIGURATION; LATTICE PARAMETERS; MOLECULES; SAPPHIRE; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CORUNDUM; FABRICATION; FILMS; JOINING; MINERALS; NITRIDES; NITROGEN COMPOUNDS; OXIDE MINERALS; PNICTIDES; SORPTION
Optional Information
- Copyright
- Copyright (c) 2021 Published by Elsevier B.V.