Published 1983
| Version v1
Book
Defects induced by annealing or irradiation in CZ silicon or germanium
- 1. CEA Centre d'Etudes Nucleaires de Grenoble, 38 (France). Dept. de Recherche Fondamentale
Description
A comparison is made between defects obtained by annealing and irradiation. The defects are observed by HREM. Irradiation induced <110> line defects obtained with 1 MeV electrons are easy to obtain in germanium. They look similar to rod-like defects in Si produced after a long-anneal at 650 deg C. Black dots obtained in both treatments are compared with the defects produced during ion bombardment in Si. (author)
Additional details
Publishing Information
- Publisher
- Institute of Physics.
- Imprint Place
- Bristol (UK)
- ISBN
- 0-85498-158-6
- Imprint Title
- Microscopy of semiconducting materials, 1983. Proceedings of the Institute of Physics conference held in Oxford, 21-23 March 1983
- Imprint Pagination
- 520 p.
- Journal Issue
- no.67
- Series
- Inst. Phys., Conf. Ser.
- Journal Page Range
- p. 71-76.
Conference
- Title
- Microscopy of semiconducting materials, 1983 symposium.
- Dates
- 21-23 Mar 1983.
- Place
- Oxford (UK).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 15033078
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; CRYSTAL DEFECTS; CZOCHRALSKI METHOD; ELECTRON MICROSCOPY; ELECTRONS; GERMANIUM; HIGH TEMPERATURE; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SILICON
- Descriptors DEC
- CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; LEPTONS; METALS; MEV RANGE; MICROSCOPY; RADIATION EFFECTS; SEMIMETALS