Temperature dependence of the efficiency of formation of radiation defects in silicon and germanium

The conditions during experiments involving irradiation of semiconductor crystals (dose rate or radiation intensity, temperature of a sample, impurity composition of a crystal, etc.) have a considerable influence on the efficiency of defect formation. Changes in this efficiency can be due to primary processes, such as generation of free vacancies 5 and interstitial atoms 1, as well as due to secondary processes such as generation of free vacancies 5 and interstitial atoms 1, as well as due to secondary processes such as the interaction of vacancies 5 and interstitials 1 with technological defects in a crystal. The authors applied the distribution function of genetic Frenkel pairs f(r) in respect of the distance r between 5 and 1, which was found in Ref. 5, and a model of the efficiency of defect formation based on this function to a description of the temperature dependence of the defect-formation efficiency