Published December 8, 2014 | Version v1
Journal article Metadata-only

Relation between the electroforming voltage in alkali halide-polymer diodes and the bandgap of the alkali halide

Creators

  • 1. Molecular Materials and Nanosystems and Institute for Complex Molecular Systems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
  • 2. Instituto de Telecomunicações, Av. Rovisco, Pais 1, 1049-001 Lisboa, Portugal and Universidade do Algarve, Campus de Gambelas, 8005-139 Faro (Portugal)
  • 3. Max-Planck Institute for Polymer Research, Ackermannweg 10, 55128 Mainz, Germany and King Abdulaziz University, Jeddah (Saudi Arabia)

Description

Electroforming of indium-tin-oxide/alkali halide/poly(spirofluorene)/Ba/Al diodes has been investigated by bias dependent reflectivity measurements. The threshold voltages for electrocoloration and electroforming are independent of layer thickness and correlate with the bandgap of the alkali halide. We argue that the origin is voltage induced defect formation. Frenkel defect pairs are formed by electron–hole recombination in the alkali halide. This self-accelerating process mitigates injection barriers. The dynamic junction formation is compared to that of a light emitting electrochemical cell. A critical defect density for electroforming is 1025/m3. The electroformed alkali halide layer can be considered as a highly doped semiconductor with metallic transport characteristics

Additional details

Identifiers

DOI
10.1063/1.4903831;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
105
Journal Issue
23
Journal Page Range
p. 233502-233502.5
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46101200
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALKALI METAL COMPOUNDS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; ELECTRIC CONTACTS; ELECTRIC POTENTIAL; ELECTROCHEMICAL CELLS; ELECTRODEPOSITION; ELECTRONS; FRENKEL DEFECTS; HOLES; INDIUM COMPOUNDS; LAYERS; POLYMERS; RECOMBINATION; REFLECTIVITY; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR MATERIALS; TIN OXIDES; VISIBLE RADIATION
Descriptors DEC
CHALCOGENIDES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRICAL EQUIPMENT; ELECTROLYSIS; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; EQUIPMENT; EVALUATION; FERMIONS; LEPTONS; LYSIS; MATERIALS; OPTICAL PROPERTIES; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POINT DEFECTS; RADIATIONS; SURFACE COATING; SURFACE PROPERTIES; TIN COMPOUNDS; VACANCIES

Optional Information

Notes
(c) 2014 Author(s)