Channeling in V3Si: Atomic displacements and electron-phonon/defect interactions

4He channeling measurements of minimum yields in single-crystal V3Si have been compared with those calculated with the Karlsruhe phonon density of states. Atomic displacements versus temperature and defect level have been so obtained. In situ radiation-damaged crystals show approx.10-1-A displacements and significant phonon stiffening. The observations explain the large changes in electrical resistivity in the defect state, and suggest that both thermal and static (defect) displacements diminish the electron-phonon/defect interactions, and to equivalent degrees