On Some Physical Properties of GeSe3-Sb2Se3-ZnSe Thin Films and Their Radiation Response

Thin films of the chalcogenides GeSe3, Sb2Se3, ZnSe, (GeSe3)80(Sb2Se3)20 and (GeSe3)70(Sb2Se3)10(ZnSe)20, are prepared by thermal evaporation onto glass substrates. The effect of ZnSe incorporation with both GeSe3, Sb2Se3 results in amorphous (GeSe3)70(Sb2Se3)10(ZnSe)20 composition as obtained from the X-ray analysis. Electrical measurements reveal a decrease in dc activation energy, ΔEdc, and an increase in ac activation energy, ΔEac, for (GeSe3)70(Sb2Se3)10(ZnSe)20 as compared with (GeSe3)80(Sb2Se3)20. Optical energy gap, Eg, and band tail width, Ee, are estimated in UV/VIS spectral region for fresh and γ-irradiated films, revealing a decrease in Eg and an increase in Ee for ZnSe and (GeSe3)70(Sb2Se3)10(ZnSe)20 compositions, with irradiation dose.