Advantages and limitations of n-type low-resistivity cadmium telluride nuclear radiation detectors
- 1. Semiconductor Detectors Lab., INR, Swierk, Poland
- 2. Oesterreichische Studiengesellschaft fuer Atomenergie G.m.b.H., Seibersdorf. Physik-Inst.
Description
Cadmium telluride detectors were fabricated from low resistivity (50-500 Ω.cm) n-type crystals grown by the sealed-ingot-zone refining method. Physical parameters of this kind of detector were discussed and the factors influencing them were analysed. The main advantage of n-type low resistivity CdTe detectors is high energy resolution for low energy X- and γ-rays at room temperature; the best value for the 5.9 keV line from a 55Fe source was 1.1 keV fwhm. The main limitation is small active volume (diameter of active surface 1-2 mm. thickness of active region below 100 μm), which is relevant to the counting efficiency and the range of registered γ-energies. As a result of the performed analysis a miniature room temperature probe with high energy and spatial resolutions was designed. (Auth.)
Additional details
Identifiers
Publishing Information
- Journal Title
- Nuclear Instruments and Methods
- Journal Volume
- 150
- Journal Issue
- 1
- Series
- Nucl. Instrum. Methods.
- Journal Page Range
- 25-30
- ISSN
- 0029-554X
Conference
- Title
- International workshop on mercuric iodide and cadmium telluride nuclear detectors.
- Dates
- 7 - 8 Jun 1977.
- Place
- Jerusalem, Israel.
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 9386798
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CADMIUM TELLURIDES; CDTE SEMICONDUCTOR DETECTORS; CHARGE COLLECTION; EFFICIENCY; ELECTRIC CONDUCTIVITY; ENERGY RESOLUTION; GAMMA DETECTION; GAMMA SPECTROMETERS; MEDIUM TEMPERATURE; MONOCRYSTALS; N-TYPE CONDUCTORS; PERFORMANCE; SPATIAL RESOLUTION; X-RAY DETECTION; X-RAY SPECTROMETERS; ZONE REFINING
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; MEASURING INSTRUMENTS; PHYSICAL PROPERTIES; RADIATION DETECTION; RADIATION DETECTORS; REFINING; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR MATERIALS; SEPARATION PROCESSES; SPECTROMETERS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
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