Published December 2013 | Version v1
Journal article

Structural defects analysis versus spin polarized tunneling in Co2FeAl/MgO/CoFe magnetic tunnel junctions with thick MgO barriers

  • 1. Institut Jean Lamour, UMR 7198, CNRS - Lorraine University, Nancy (France)
  • 2. Centre for Superconductivity, Spintronics and Surface Science (C4S), Technical University of Cluj-Napoca, Cluj-Napoca (Romania)
  • 3. CEMES, CNRS 29 rue J. Marvig, 31055 Toulouse (France)

Description

We report on spin polarization reduction by incoherent tunneling in single crystal Co2FeAl/MgO/Co50Fe50 magnetic tunnel junctions (MTJs). A large density of misfit dislocations in the Heusler based MTJs has been provided by a thick MgO barrier and its 3.8% lattice mismatch with the Co2FeAl electrode. Our analysis implicates a correlated structural-transport approach. The crystallographic coherence in the real space has been investigated by High Resolution Transmission Electron Microscopy phase analysis. The electronic transport experiments in variable temperature, fitted with a theoretical extended-Glazman–Matveev model, address different levels of the tunneling mechanisms from direct to multi-center hopping. We demonstrate a double impact of dislocations, as extended defects, on the tunneling polarization. Firstly, the breaking of the crystal symmetry destroys the longitudinal and lateral coherence of the propagating Bloch functions. This affects the symmetry filtering efficiency of the Δ1 states across the (001) MgO barriers and reduces the associated effective tunneling polarization. Secondly, dislocations provide localized states within the MgO gap. This determines temperature activated spin-conserving inelastic tunneling through chains of defects which are responsible for the one order of magnitude drop of the tunnel magnetoresistance from low to room temperature. - Highlights: • The paper focuses on tunneling transport in realistic single crystal magnetic tunnel junctions involving the full Heusler alloy Co2FeAl. • Via correlated structural-transport analysis approach, the paper demonstrates the role of extended structural defects in a single crystal epitaxial barrier on the tunneling polarization efficiency. • We illustrate the effect of the crystal symmetry breaking on the spin and symmetry polarized tunneling transport. • The transport results are confronted with a theoretical model considering different orders of tunneling mechanisms, from direct to multi-center hopping. • Combining theoretical and experimental analysis, the paper demonstrates the negative impact of dislocations, as extended defects, on the tunneling polarization

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jmmm.2013.07.028

Additional details

Identifiers

DOI
10.1016/j.jmmm.2013.07.028;
PII
S0304-8853(13)00513-1;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
347
Journal Page Range
p. 79-85
ISSN
0304-8853
CODEN
JMMMDC

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.