Published December 11, 2013
| Version v1
Journal article
Temperature dependent charge transport in organic field-effect transistors with the variation of both carrier concentration and electric field
Creators
- 1. Linz Institute for Organic Solar cells, Johannes Kepler University Linz, Altenbergerstr. 69, Linz 4040 Austria (Austria)
- 2. Department of Chemistry, Faculty of Arts and Sciences, Kocaeli University, 41380 Kocaeli (Turkey)
- 3. Institute of Semiconductor Physics, Johannes Kepler University Linz, Altenberger str. 69, Linz 4040 Austria (Austria)
Description
We present experimental evidence of combined effects of temperature, carrier concentration, electric field as well as disorder on charge transport in an organic field-effect transistor (OFET). Transfer characteristics of an OFET based on sexithiophene active layer were measured from 80 to 300 K. Thermally activated carrier mobility followed Arrhenius law with two activation energies. Carrier density variation led to finite extrapolated Meyer–Neldel (MN) temperature (780 K) at low fields. Negative electric field-dependent mobility was observed in available field range. MN temperature shifted towards higher temperature when the electric field increased, and did not retain its finite character above the field of 4 × 103 V cm−1. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/46/49/495105Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 46
- Journal Issue
- 49
- Journal Page Range
- [6 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46035587
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ACTIVATION ENERGY; CARRIER DENSITY; CARRIER MOBILITY; CHARGE TRANSPORT; CONCENTRATION RATIO; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ENERGY; MOBILITY; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS