Published February 16, 2015
| Version v1
Journal article
Enhancing the pH sensitivity by laterally synergic modulation in dual-gate electric-double-layer transistors
- 1. Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China)
- 2. School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)
Description
The sensitivity of a standard ion-sensitive field-effect transistor is limited to be 59.2 mV/pH (Nernst limit) at room temperature. Here, a concept based on laterally synergic electric-double-layer (EDL) modulation is proposed in order to overcome the Nernst limit. Indium-zinc-oxide EDL transistors with two laterally coupled gates are fabricated, and the synergic modulation behaviors of the two asymmetric gates are investigated. A high sensitivity of ∼168 mV/pH is realized in the dual-gate operation mode. Laterally synergic modulation in oxide-based EDL transistors is interesting for high-performance bio-chemical sensors
Additional details
Identifiers
- DOI
- 10.1063/1.4913445;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 7
- Journal Page Range
- p. 073507-073507.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46118532
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- FIELD EFFECT TRANSISTORS; INDIUM COMPOUNDS; MODULATION; PERFORMANCE; SENSITIVITY; SENSORS; TEMPERATURE RANGE 0273-0400 K; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC