Effect of substrate roughness on Mo/Si multilayer optics for EUVL produced by UHV-e-beam evaporation and ion polishing
Description
Our current status of Mo/Si multilayer extreme ultraviolet coatings fabricated by UHV e-beam evaporation and ion polishing is presented. Standard Mo/Si multilayer coating deposited onto 4 inch Si-wafer substrates showing peak reflectivities of 67.4% with a lateral homogeneity in coating reflectance of approximately 0.3% and a variation in peak wavelength of approximately 0.05 nm over the full aperture have been achieved. At.-wavelength reflectivities achieved for comparable multilayer coatings deposited onto Zerodur substrates with an enhanced microroughness (σ=0.55 nm) is shown to drop severely by almost 10%. A partial smoothing could be achieved by applying thin a-C buffer layers to these substrates, which in turn enhance the at-wavelength reflectivity of the Mo/Si multilayer by 0.7%
Additional details
Identifiers
- DOI
- 10.1016/S0040-6090;
- PII
- S004060900300289X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 433
- Journal Issue
- 1-2
- Journal Page Range
- p. 230-236
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 12. international conference on thin films
- Dates
- 15-20 Sep 2002
- Place
- Bratislava (Slovakia)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37013325
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- COATINGS; ELECTRON BEAMS; EVAPORATION; EXTREME ULTRAVIOLET RADIATION; IONS; LAYERS; MOLYBDENUM; POLISHING; REFLECTIVITY; SILICON; SUBSTRATES
- Descriptors DEC
- BEAMS; CHARGED PARTICLES; ELECTROMAGNETIC RADIATION; ELEMENTS; LEPTON BEAMS; METALS; OPTICAL PROPERTIES; PARTICLE BEAMS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATIONS; REFRACTORY METALS; SEMIMETALS; SURFACE FINISHING; SURFACE PROPERTIES; TRANSITION ELEMENTS; ULTRAVIOLET RADIATION
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.