Published March 2008 | Version v1
Journal article Metadata-only

Transport properties of anodic porous alumina for ReRAM

Creators

  • 1. National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047 (Japan)

Description

A voltage-induced bistable switching effect has been studied for M/AlOx/Al devices made of the anodic porous alumina with a top electrode of aluminium (or silver) to develop a next generation memory (AlOx-ReRAM). The resistance state of memory is switched between OFF-state (high resistance) and ON-state (low resistance), where the resistance ratio is higher than 104. In the thermally stimulated current (TSC) measurement, a narrow band was observed around 290 K, indicating the conduction mechanism comes from a kind of impurity band in the energy gap. An anomaly was also observed around 290 K in the temperature dependence of resistance at the ON-state

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/109/1/012017

Additional details

Identifiers

DOI
10.1088/1742-6596/109/1/012017;

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
109
Journal Issue
1
Journal Page Range
[4 p.]
ISSN
1742-6596

Conference

Title
International symposium on advanced nanodevices and nanotechnology
Dates
2-7 Dec 2007
Place
Waikoloa, HI (United States)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40024632
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ALUMINIUM; ALUMINIUM OXIDES; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRODES; ELECTRONIC STRUCTURE; ENERGY GAP; INTERFACES; POROUS MATERIALS; SILVER; TEMPERATURE DEPENDENCE
Descriptors DEC
ALUMINIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; MATERIALS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; TRANSITION ELEMENTS