Reactive species in Ar+H2 plasma-aided nanofabrication: two-dimensional discharge modelling
Creators
- 1. Plasma Nanoscience at Complex Systems, School of Physics, University of Sydney, Sydney, NSW 2006 (Australia)
- 2. PDP Technology Research Center, Pusan National University, Geumjeong-gu, Busan 609-735 (Korea, Republic of)
- 3. A-STAR Institute of High Performance Computing, Singapore Science Park II, 117528, Singapore (Singapore)
Description
Understanding the generation of reactive species in a plasma is an important step towards creating reliable and robust plasma-aided nanofabrication processes. A two-dimensional fluid simulation of the number densities of surface preparation species in a low-temperature, low-pressure, non-equilibrium Ar+H2 plasma is conducted. The operating pressure and H2 partial pressure have been varied between 70-200 mTorr and 0.1-50%, respectively. An emphasis is placed on the application of these results to nanofabrication. A reasonable balance between operating pressures and H2 partial pressures that would optimize the number densities of the two working units largely responsible for activation and passivation of surface dangling bonds (Ar+ and H respectively) in order to achieve acceptable rates of surface activation and passivation is obtained. It is found that higher operating pressures (150-200 mTorr) and lower H2 partial pressures (∼5%) are required in order to ensure high number densities of Ar+ and H species. This paper contributes to the improvement of the controllability and predictability of plasma-based nanoassembly processes
Additional details
Identifiers
- DOI
- 10.1088/0031-8949/76/2/011;
- PII
- S0031-8949(07)42323-11;
Publishing Information
- Journal Title
- Physica Scripta (Online)
- Journal Volume
- 76
- Journal Issue
- 2
- Journal Page Range
- p. 187-195
- ISSN
- 1402-4896
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39029394
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- ARGON IONS; FABRICATION; HYDROGEN; NANOSTRUCTURES; PARTIAL PRESSURE; PASSIVATION; PLASMA DENSITY; PRESSURE DEPENDENCE; PRESSURE RANGE PA; SIMULATION; TWO-DIMENSIONAL CALCULATIONS
- Descriptors DEC
- CHARGED PARTICLES; ELEMENTS; IONS; NONMETALS; PHYSICAL PROPERTIES; PRESSURE RANGE; THERMODYNAMIC PROPERTIES